A Novel Confined Nitride-Trapping Layer Device for 3-D NAND Flash With Robust Retention Performances

Chung-Hao Fu
Chung-Hao Fu
Guan-Ru Lee
Guan-Ru Lee
Chia-Jung Chiu
Chia-Jung Chiu
Keh-Chung Wang
Keh-Chung Wang

IEEE Transactions on Electron Devices, pp. 989-994, 2020.

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Keywords:
3-D nandarchive memoryconfined SiNlong retention

Abstract:

A novel confined nitride (SiN) charge trapping 3-D NAND flash with excellent postcycling retention performances was demonstrated. Using a uniform sidewall lateral recess in the 3-D stack followed by a SiN pull-back process to isolate the SiN trapping layer in a self-aligned way is critical to facilitate this structure. Lower erase saturat...More

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