A Novel Confined Nitride-Trapping Layer Device for 3-D NAND Flash With Robust Retention Performances
IEEE Transactions on Electron Devices, pp. 989-994, 2020.
3-D nandarchive memoryconfined SiNlong retention
A novel confined nitride (SiN) charge trapping 3-D NAND flash with excellent postcycling retention performances was demonstrated. Using a uniform sidewall lateral recess in the 3-D stack followed by a SiN pull-back process to isolate the SiN trapping layer in a self-aligned way is critical to facilitate this structure. Lower erase saturat...More
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