Contribution of remote interface polar phonons in the hole mobility of diamond

The role of remote interface polar phonon modes on the electronic transport properties of dimensionally confined diamond structures have been investigated in detail. By employing a dielectric continuum model, scattering rates, hole mobility and relaxation times in mesoscopic diamond-based devices are calculated. The performance has been analyzed by inserting polar over layers on diamond with wide-band gap materials such as AlN or w − BN. We have shown that a Fröhlich potential due to the interface optical phonon modes in the upper layer is created, that decays into diamond resulting in the existence of a remote polar phonon potential in the material. Hole scattering from remote polar phonons dominate on the order of two or more in magnitude resulting in substantial decrease in hole mobility in diamond. Thus, the present research will provide a milestone for understanding interface phonons that penetrate to the two-dimensional hole gas (2DHG) in confined diamond structures as compared to their bulk counterpart and can also be applied to other polar materials used for doping.