High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K

Boyan Wang
Boyan Wang
Ming Xiao
Ming Xiao
Xiaodong Yan
Xiaodong Yan
Jiahui Ma
Jiahui Ma

Applied Physics Letters, pp. 2635032019.

Cited by: 0|Bibtex|Views10|DOI:https://doi.org/10.1063/1.5132818
Other Links: academic.microsoft.com

Abstract:

This work presents the temperature-dependent forward conduction and reverse blocking characteristics of a high-voltage vertical Ga2O3 power rectifier from 300 K to 600 K. Vertical β-Ga2O3 Schottky barrier diodes (SBDs) were fabricated with a bevel-field-plated edge termination, where a beveled sidewall was implemented in both the mesa and...More

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