High-voltage vertical Ga2O3 power rectifiers operational at high temperatures up to 600 K

This work presents the temperature-dependent forward conduction and reverse blocking characteristics of a high-voltage vertical Ga2O3 power rectifier from 300 K to 600 K. Vertical β-Ga2O3 Schottky barrier diodes (SBDs) were fabricated with a bevel-field-plated edge termination, where a beveled sidewall was implemented in both the mesa and...More