Enhancement-Mode $eta$ -Ga 2 O 3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker
IEEE Electron Device Letters(2020)
摘要
Enhancement-mode (E-mode) vertical β-Ga2O3 metal-oxide-semiconductor (MOS) field-effect transistors featuring a current aperture were developed on a single-crystal β-Ga2O3 (001) substrate. Nitrogen ions were implanted into a drift layer grown by halide vapor phase epitaxy to form current blocking layers (CBLs) for vertical source-drain isolation, while Si ions were implanted to form degenerately d...
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关键词
MOSFET,Apertures,Nitrogen,Gallium,Silicon,Logic gates
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