Universal and scalable route to fabricate GaN nanowire-based LED on amorphous substrate by MOCVD

•Universal approach of single crystalline GaN nanowire growth on amorphous substrates by MOCVD.•Reduced quantum confined Stark effect due to (112¯2) semi-polar InGaN/GaN MQW shells.•Fabrication of GaN nanowire-based LED on amorphous glass substrate.•Hybrid active structure of InGaN quantum dots–quantum wells.