High-frequency Characteristics of InGaP/GaAs Double Heterojunction Bipolar Transistor Epitaxially Grown on 200 mm Ge/Si Wafers

Loke Wan Khai,Ng Geok Ing,Eugene A. Fitzgerald,Yoon Soon Fatt,Wang Yue,Lee Kwang Hong,Liu Zhihong,Xie Hanlin,Chiah Siau Ben,Kenneth Lee Eng Kian,Zhou Xing,Tan Chuan Seng

IEEE Journal of the Electron Devices Society（2020）

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摘要

N-p-n InGaP/GaAs double heterojunction bipolar transistor has been successfully grown on a 200 mm Ge/Si wafer using metalorganic chemical vapor deposition with low defect density of 107 cm-2. Non-gold metals of Ni/Ge/Al and Ti/Al are used to form the ohmic contact for small pieces device fabrication. Both direct-current (dc) and high-frequency characteristics of the device were measured. The devic...

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关键词

Heterojunction bipolar transistors,Substrates,Silicon,Cutoff frequency,Gallium arsenide,Epitaxial growth,Current measurement

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