A highly reliable physics-based SPICE compact model of IGZO memristor considering the dependence on electrode metals and deposition sequence

•The highly accurate and realistic SPICE compact model for an IGZO-based memristor has been developed.•The switching layer is IGZO and the electrode metals are Pd and Mo, on the Si substrate.•The switching behaviors of the IGZO memristor have dependence on the order of electrode processes.•The interface property is significantly altered over the sputtering on the bottom electrode.•We are not able to observe the symmetric I-V curves even when those two electrodes exchange their positions.