Investigation of strain and stoichiometry of epitaxial titanium nitride on sapphire
Thin Solid Films(2020)
摘要
•TiN films grown with varying deposition temperatures are compositionally similar.•Low-angle tilt boundaries observed for all films as strain relaxation mechanisms.•Low strain and low defect density result from growth temperatures above 490°C.•Low strain and low defect density are conducive to high plasmonic quality in TiN.
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