Impacts Of Channel Doping On Nbti Reliability And Variability In Nanoscale Finfets

In this paper, the channel doping concentration (N-ch) dependence of negative bias temperature instability (NBTI) reliability and variability is comprehensively studied using 'atomistic' TCAD simulations. The Delta V-th distributions and current density distributions at different N-ch are investigated. It is helpful for understanding of NBTI degradation in nanoscale devices.