Development Of P(+)/N(+) Polysilicon Tunnel Junctions Compatible For Industrial Screen Printing
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)(2019)
摘要
Contact passivation in silicon solar cells is currently a very popular topic in the PV community. One method is via the deposition of thin tunneling layer alongside highly doped polysilicon. However, challenges remain for the metallization of p(+) polysilicon layers using industrial approaches. In this work we demonstrate that a solar cell with p(+) polysilicon layer can be properly metalized by industrial screen printing by forming the polysilicon tunnel junction. Characterization of tunnel junctions with and without interfacial SiOx layer shows rear J(0) values of similar to 82 fA/cm(2) and similar to 101 fA/cm(2), respectively. Such tunnel junctions can be directly applied for two-terminal tandem integration.
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关键词
tunneling, metallization, photovoltaic cells, silicon
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