Lateral p-GaN/2DEG junction diodes by selective-area p-GaN trench-filling-regrowth in AlGaN/GaN

Ming Xiao
Ming Xiao
Zhonghao Du
Zhonghao Du
Jinqiao Xie
Jinqiao Xie
Xiaodong Yan
Xiaodong Yan
Kai Cheng
Kai Cheng

Applied Physics Letters, pp. 0535032020.

Cited by: 0|Bibtex|Views11|DOI:https://doi.org/10.1063/1.5139906
Other Links: academic.microsoft.com

Abstract:

This work demonstrates a lateral p-n junction diode formed between the two-dimensional electron gas (2DEG) and the selective-area regrown p-GaN in AlGaN/GaN. Benefiting from the in-plane 2DEG channel, this p-GaN/2DEG diode can directly characterize the current conduction and voltage blocking characteristics of the regrown sidewall p-n ju...More

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