Predicting Open-Circuit Voltages In Atomically-Thin Monolayer Transition Metal Dichalcogenides-Based Solar Cells
2019 IEEE 46TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)(2019)
摘要
We present an approach to quantify upper limits of open circuit voltages (V-oc) that can possibly be achieved from monolayer transition metal dichalcogenides (TMDs) WS2, MoS2, WSe2, and MoSe2-based solar cells, and compare them with state-of-the-art perovskite materials. Spectrally-resolved microphotoluminescence (mu-PL) and absorption measurements were utilized in the generalised Planck law of emissions to derive quasi-Fermi level splitting values (Delta mu) of these monolayers under illumination. The value of Delta mu of a certain material represents the highest possible open-circuit voltage of a solar cell fabricated from that material. From our analysis, values close to similar to 1.4, similar to 1.12, similar to 1.06 and similar to 0.93 V could be potentially achieved from WS2, MoS2, WSe2, and MoSe2 monolayers-based solar cells under 1-sun illumination. The results reveal the potential of atomically-thin TMDs for high-voltage, ultra-light, flexible, and transparent photovoltaics.
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关键词
transition metal dichalcogenides, quasi-Fermi level splitting, open-circuit voltage, photoluminescence, photovoltaic cells, two-dimensional materials
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