Selective Pulsed Chemical Vapor Deposition of Water-free HfOx on Si in Preference to SiCOH and Passivated SiO2

Jong Youn Choi,Christopher F. Ahles,Yunil Cho,Ashay Anurag,Keith T. Wong,Srinivas D. Nemani,Ellie Yieh,Andrew C. Kummel

Applied Surface Science（2020）

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摘要

•HfOx was selectively deposited on Si in preference to SiCOH using Hf(OtBu)4.•The selectivity relies on a co-reactant free as well as a pulsed CVD process.•The selectivity of HfOx was about 62:1 between Si and passivated SiCOH.•Scomb was 5 times better than previously reported water-based HfO2 selectivity.•Pulsed CVD enhanced selectivity using reversible adsorption of a precursor.

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关键词

Water-free oxide deposition,Area-selective deposition,Pulsed chemical vapor deposition

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