Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors

Shahadat H. Sohel
Shahadat H. Sohel
Andy Xie
Andy Xie
Hao Xue
Hao Xue
Towhidur Razzak
Towhidur Razzak
Sherry Campbell
Sherry Campbell
Donald White
Donald White
Kenneth Wills
Kenneth Wills

APPLIED PHYSICS EXPRESS, pp. 0365022020.

Cited by: 0|Bibtex|Views8|DOI:https://doi.org/10.35848/1882-0786/ab7480
Other Links: academic.microsoft.com

Abstract:

We demonstrate DC-RF dispersion-free graded AlGaN channel transistor with an epitaxial passivation. The device used for this experiment was an AlGaN channel polarization-graded field effect transistor (PolFET) with Al-composition grading from 0% to 30%. We were able to reduce the dispersion to almost zero current collapse and zero knee-wa...More

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