Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors
APPLIED PHYSICS EXPRESS, pp. 0365022020.
We demonstrate DC-RF dispersion-free graded AlGaN channel transistor with an epitaxial passivation. The device used for this experiment was an AlGaN channel polarization-graded field effect transistor (PolFET) with Al-composition grading from 0% to 30%. We were able to reduce the dispersion to almost zero current collapse and zero knee-wa...More
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