Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance
international electron devices meeting(2019)
摘要
In this work we explore the composition space of the Ovonic Threshold Switch (OTS) selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co-sputtering capabilities enabled the tuning of the As/Te ratio, Ge and Si content to increase the crystallization temperature TXu003e450°C. Guided by ab initio calculations, we optimize the composition and achieve stable endurance characteristics of more than 1011 cycles on 65nm devices fabricated on 300mm wafers. Finally, we propose a switching model that can predict the statistical distribution of the threshold voltage (VTH), explaining V TH drift and time-dependent instabilities.
更多查看译文
关键词
Si-Ge-As-Te Ovonic threshold switch selector device,Physical Vapor Deposition co-sputtering,threshold voltage,switching model,Si-Ge-As-Te material system,Si-Ge-As-Te
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要