SPICE compact model of IGZO memristor based on non-quasi statically updated Schottky barrier height

A SPICE compact model based on non-quasi statically updated Schottky barrier is proposed and demonstrated in an IGZO memristors with Pd/IGZO/Mo structure. Our model combines the thermionic emission-based conduction and the potentiation/depression based on the Schottky barrier height modulation resulting from the oxygen ion migration or the electron trapping/detrapping at separate interface between the metal electrode and the switching layer. A stretched exponential function is used for non-quasi static update of the Schottky barrier. Proposed model reproduces the time-varying current, the DC I-V, and potentiation/depression characteristics very well with concrete parameter-extracting procedure. Our result is potentially useful in the design of devices and circuits for the oxide memristor-based neuromorphic computing.