Demonstration of a Reliable 1 Gb Standalone Spin-Transfer Torque MRAM For Industrial Applications
2019 IEEE International Electron Devices Meeting (IEDM)(2019)
摘要
In this paper, we describe a fully-functional 1 Gb standalone spin-transfer torque magnetoresistive random access memory (STT-MRAM) integrated on 28 nm CMOS and based on perpendicular magnetic tunnel junctions (pMTJ's). Electrical short flows were used to guide the pMTJ stack development. We demonstrate reliable operation of the 1 Gb devices, including well-behaved STT write distributions, an endurance cycling lifetime up to at least 2×10
11
cycles, and data retention of 10 years at 85°C. Testing results at -35°C to 110°C for the 1 Gb devices indicate good capability for industrial temperature range applications.
更多查看译文
关键词
industrial applications,STT-MRAM,CMOS,perpendicular magnetic tunnel junctions,electrical short flows,pMTJ stack development,industrial temperature range applications,fully-functional standalone spin-transfer torque magnetoresistive random access memory,reliable standalone spin-transfer torque MRAM,STT write distributions,endurance cycling lifetime,size 28.0 nm,time 10.0 year,temperature -35.0 degC to 110.0 degC,storage capacity 1 Gbit
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要