Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization
IEEE Electron Device Letters(2020)
摘要
In this work, fast sweeping characterization with an extremely short relaxation time was used to probe the
${V}_{\text {TH}}$
instability of p-GaN gate HEMTs. As the
${I}_{\text {D}}$
-
${V}_{\text {G}}$
sweeping time deceases from 5 ms to
$5~\mu \text{s}$
, the
${V}_{\text {TH}}$
dramatically degenerates from 3.13 V to 1.76 V, meanwhile the hysteresis deteriorates from 22.6 mV to 1.37 V. Positive bias temperature instability (PBTI) measurement by fast sweeping shows the
${V}_{\text {TH}}$
features a very fast shifting process but a slower recovering process. D-mode HEMTs counterpart without Mg contamination demonstrates a negligible
${V}_{\text {TH}}$
shift and hysteresis, proving the
${V}_{\text {TH}}$
instability is probably due to the ionization of acceptor-like traps in the p-GaN depletion region. Finally, the
${V}_{\text {TH}}$
instability is verified by a GaN circuit under switching stress. The
${V}_{\text {TH}}$
instability under different sweeping speed uncovers the fact that the high
${V}_{\text {TH}}$
by conventionally slow DC measurements is probably artificial. The DC
${V}_{\text {TH}}$
should be high enough to avoid HEMT faulty turn-on.
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关键词
p-GaN gate HEMT,fast sweeping,VTH shift,PBTI
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