Thin film field effect transistors: Charge transport study in zinc quinolate complexes

Charge transport properties of zinc quinolate complexes namely, bis(8-hydroxyquinolinato)Zinc(II) and bis(2-methyl-8-hydroxyquinolinato)Zinc(II) have been studied by fabricating field effect transistors. The zinc metal complexes possess high thermal stability and also having good film forming property and hence can be easily processable. Solution processed cross-linked poly(4-vinylphenol) (CL-PVP) polymeric gate insulator has been employed in the fabrication of top-contact bottom-gate organic field-effect transistors (OFET) with thermally evaporated zinc complexes as channel layer material. The electron mobility of bis(8-hydroxyquinolinato)Zinc(II) and bis(2-methyl-8-hydroxyquinolinato)Zinc(II) have been found to be 1.12 × 10−3 and 1.93 × 10−3 cm2V−1sec−1, respectively with good on to off current ration of the order of 102. The results demonstrate the utility of zinc quinolate complexes as potential n-channel materials for organic electronic device applications.