Optoelectrical properties of high-performance low-pressure chemical vapor deposited phosphorus-doped polysilicon layers for passivating contact solar cells

Pradeep Padhamnath,Nitin Nampallia,Naomi Nandakumar,Jammaal Kitz Buatis, Marvic-John Navala,Armin G. Aberlea,Shubham Duttagupta

Thin Solid Films（2020）

引用 11|浏览6

暂无评分

摘要

•Analysis of low pressure chemical vapor deposited phosphorus doped polysilicon layers.•Optimization of diffusion recipe for each thickness to obtain excellent passivating properties.•Excellent passivation provided by doped polysilicon layers with ultrathin interfacial oxide.•Ʈeff ~ 14–17 ms. J0 ~ 1.2 −1.8 fA/cm2, iVOC ~ 742–747 mv.

查看译文

关键词

Passivating contacts,Poly-silicon,Passivation,Low pressure chemical vapor deposition,Ellipsometry

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要