Investigations on the origin of strain variation in the Zinc-blende phase along the depth of GaP/Si(111) using spatially resolved polarized and wavelength dependent Raman Spectroscopy

•Cross-sectional surface (CSS) of GaP/Si(1 1 1) is probed using Raman spectroscopy.•AFM and wavelength dependent Raman spectroscopy facilitates stimulant for probing CSS.•Sub-micron scale strain variation in ZB phase of GaP along the depth is probed.•More strained ZB phase is detected near interface, which is in proximity of WZ phase.•The study can aid engineering of GaP/Si based crystal phase quantum structures.