Enhancement-Mode Current Aperture Vertical Ga2 O3 MOSFETs
2019 Device Research Conference (DRC)(2019)
摘要
Ga
2
O
3
is attractive for power electronics owing to its wide bandgap of 4.5 eV and the availability of economical melt-grown native substrates. Normally-off vertical power switches are highly sought-after since they allow for superior field termination and current drive at the device level while ensuring fail-safe operation and simplified designs at the system level. Capitalizing on ion-implantation technologies for donor (Si) [1] and deep acceptor (N) [2] doping of Ga
2
O
3
, we have demonstrated depletion-mode (D-mode) vertical Ga
2
O
3
MOSFETs [3] in which Si-ion (Si
+
) implanted top n
++
source contacts are electrically isolated from the bottom drain contact by a N-ion (N
++
) implanted current blocking layer (CBL) except at an aperture bounded by CBLs through which drain current (ID) is conducted. The CBL also serves as a back-barrier for a top-gated lateral channel defined by another Si
+
implantation step. Based on this manufacturable all-ion-implanted structure, this paper presents accumulation-mode normally-off vertical Ga
2
O
3
MOSFETs by appropriately designing the channel doping to control the threshold voltage (VT) without requiring fundamental process modifications.
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关键词
economical melt-grown native substrates,vertical power switches,superior field termination,device level,fail-safe operation,system level,ion-implantation technologies,deep acceptor doping,depletion-mode,D-mode,3 MOSFETs,bottom drain contact,current blocking layer,drain current,manufacturable all-ion-implanted structure,enhancement-mode current aperture vertical Ga2O3 MOSFET,accumulation-mode normally-off vertical Ga2O3 MOSFET,top-gated lateral channel,Si-ion implanted current blocking layer,electron volt energy 4.5 eV,Ga2O3,Si+
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