Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications

Vincent Gidel,Frédéric Gianesello,Pascal Chevalier,Grégory Avenier,Nicolas Guitard,Michel Buczko,Cyril Luxey,Guillaume Ducournau

2020 IEEE Radio and Wireless Symposium (RWS)（2020）

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摘要

In this paper, an innovative Schottky diode architecture is proposed and implemented in 130 nm BiCMOS technology. A state-of-the-art 1 THz cut-off frequency is measured and an innovative way to modify the height of the Schottky barrier is proposed. This smart way could enable zero-bias high-frequency circuit designs with a very low height value of the Schottky barrier in advanced BiCMOS technology without requiring any custom implantation.

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关键词

Schottky diodes,barrier height,thermal budget,Nsinker,cut-off frequency

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