High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

Arman Rashidi,Ashwin K. Rishinaramangalam,Andrew A. Aragon,Saadat Mishkat-Ul-Masabih,Morteza Monavarian,Changmin Lee,Steven P. Denbaars,Daniel F. Feezell

IEEE Photonics Technology Letters（2020）

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摘要

We demonstrate a superluminescent diode fabricated on a nonpolar m-plane GaN substrate by employing a linearly tapered waveguide design. A high electrical -3dB modulation bandwidth ( f3dB) of 2.5 GHz at a current density of 30 kA/cm2 is achieved. The high modulation bandwidth is attributed to the shorter carrier recombination lifetime, the linear gain curve in the nonpolar m-plane quantum wells, a...

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关键词

Superluminescent diodes,Current density,Bandwidth,Modulation,Optical waveguides,Spontaneous emission,Gallium nitride

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