Optimization of physical properties of transparent conductive F and Ga co-doped ZnO films for optoelectronic applications

•F and Ga co-doped ZnO films were deposited by RF magnetron sputtering.•High mobility and low resistivity of F and Ga co-doped ZnO films were achieved.•Good wide spectral transmission in the optical range 380–1400 nm was obtained.•The structural properties of the F and Ga co-doped ZnO films were investigated.•Electrical and optical performance is enhanced by further post-annealing.