Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams

T. Koschine
T. Koschine
M. Dickmann
M. Dickmann

Acta Physica Polonica A, pp. 227-230, 2020.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.12693/aphyspola.137.227
Other Links: academic.microsoft.com

Abstract:

Open spaces in amorphous Al2O3 films fabricated by atomic layer deposition and in AlONx deposited by a reactive sputtering technique were probed by using monoenergetic positron beams. In these films, open spaces with three different sizes were found to coexist. The mean size and the concentration of open spaces were decreased by annealing...More

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