Lattice bow in thick, homoepitaxial GaN layers for vertical power devices

Qiang Liu,Naoki Fujimoto,Jian Shen,Shugo Nitta,Atsushi Tanaka,Yoshio Honda,Zlatko Sitar,Michał Boćkowski,Yoshinao Kumagai,Hiroshi Amano

Journal of Crystal Growth（2020）

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摘要

•Lattice bow generated by HVPE layers on free-standing GaN wafers was studied.•Samples include HVPE homoepitaxial layers on ammonothermal and HVPE GaN wafers.•Bow increased on all samples but on the ammonothermal GaN wafers was minimal.•Lattice bow increase was related to elongation of dislocations via climb.

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关键词

A1. Lattice bow,A3. Thick GaN homoepitaxy,B1. Nitrides,B2. Semiconducting III-V materials,B3. Vertical power devices

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