Direct-indirect GeSn band structure formation by laser Radiation: The enhancement of Sn solubility in Ge

Pavels Onufrijevs,Patrik Ščajev,Arturs Medvids,Mindaugas Andrulevicius,Saulius Nargelas,Tadas Malinauskas,Sandra Stanionytė,Martynas Skapas,Liga Grase, Arturs Pludons,Michael Oehme,Klara Lyutovich,Erich Kasper,Joerg Schulze,Hung Hsiang Cheng

Optics & Laser Technology（2020）

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摘要

•Sn solubility can be enhanced by laser irradiation in GeSn alloy.•Graded bandgap GeSn structure can be formed by laser processing.•Direct bandgap GeSn is achieved by Sn enhancement from 4% to 14%.•Differential reflectivity signal & EDS confirm indirect-direct transition.•Carrier lifetime of ~25 ns verifies good quality of processed material.

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关键词

GeSn,Solid solution,Thermogradient effect,Laser radiation,Carrier recombination

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