Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond

Hyung-Jin Lee,Steven Callender,Said Rami,Woorim Shin,Qiang Yu,Jose Mauricio Marulanda

2020 IEEE Custom Integrated Circuits Conference (CICC)（2020）

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摘要

Intel's 22FFL is the comprehensive FinFET technology offering the best-in-class RF transistors achieving ft and fmax above 300GHz and 450GHz, respectively. The addition of a high-power RF device (HyPowerFF) and enhanced mmWave BEOL support the opportunity to push silicon technology beyond the 5G era.

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关键词

Intel 22FFL,RF transistors,high-power RF device,silicon technology,Intel low-power FinFET process technology,HyPowerFF,enhanced mmWave BEOL,5G era,size 22.0 nm

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