Thermal Field Analysis for New AlGaN/GaN HEMT with Partial Etched AlGaN Layer

In order to explore the distribution of the device temperature field, this paper takes the new AlGaN/GaN HEMT with partial etched AlGaN layer as the research object. First, the ISE TCAD software is used to simulate the temperature field of AlGaN/GaN HEMT in two dimensions. The simulation results show a decrease of the maximum temperature and average junction temperature in the device channel with ...