Design Principles of Self-Compensated NBTI-Free Negative Capacitor FinFET

The Landau field-effect transistors have been previously investigated to lower the power dissipation of integrated circuits by reducing the subthreshold swing (SS) below the Boltzmann limit of 60 mV/dec. The basic idea is to replace the classical gate insulator with dielectrics that exhibit a negative capacitance (NC) associated with the double-well energy landscape, for example, ferroelectrics (F...