Electrostatic Engineering Using Extreme Permittivity Materials for Ultra-Wide Bandgap Semiconductor Transistors
IEEE Transactions on Electron Devices(2021)
摘要
The performance of ultra-wide bandgap semiconductors like β-Ga
2
O
3
is critically dependent on achieving high average electric fields within the active region of the device. In this article, we show that dielectrics like BaTiO
3
with extremely high dielectric constant can provide an efficient field management strategy by improving the uniformity of electric field profile within the gate-drain region of lateral field-effect transistors. Using this strategy, we achieved high average breakdown field of 1.5 and 4 MV/cm at gate-drain spacing (L
gd
) of 6 and 0.5 μm, respectively in β-Ga
2
O
3
, at a high channel sheet charge density of 1.6 × 10
13
cm
-2
. The high channel charge density along with the high breakdown field enabled a record power figure of merit (V
br
2
/R
ON
) of 376 MW/cm
2
at a gate-drain spacing of 3 μm.
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关键词
Barium titanate,breakdown,gallium oxide,high-k,power figure of merit
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