First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate

J. Perozek
J. Perozek
J. Niroula
J. Niroula
O. Aktas
O. Aktas
V. Odnoblyudov
V. Odnoblyudov

2020 Device Research Conference (DRC), pp. 1-2, 2020.

Cited by: 0|Bibtex|Views2|DOI:https://doi.org/10.1109/DRC50226.2020.9135176
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Other Links: dblp.uni-trier.de|academic.microsoft.com

Abstract:

GaN vertical power FinFETs are promising high voltage switches for the next generation of high-frequency power electronics applications. Thanks to a vertical fin channel, the device offers excellent electrostatic and threshold voltage control, eliminating the need for epitaxial regrowth 1 or p-type doping 2 unlike other vertical GaN power...More

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