First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate
2020 Device Research Conference (DRC), pp. 1-2, 2020.
GaN vertical power FinFETs are promising high voltage switches for the next generation of high-frequency power electronics applications. Thanks to a vertical fin channel, the device offers excellent electrostatic and threshold voltage control, eliminating the need for epitaxial regrowth 1 or p-type doping 2 unlike other vertical GaN power...More
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