On the Trap Locations in Bulk FinFETs After Hot Carrier Degradation (HCD)
IEEE Transactions on Electron Devices(2020)
摘要
In this brief, typical locations of the interface and oxide traps generated by the hot carrier degradation (HCD) in FinFETs are studied with experiments and “atomistic” TCAD simulations under the worst case stress conditions. The typical round-Fin locations of different types of traps are analyzed by comparing the experimentally extracted results with the calibrated TCAD simulations. Then, the tra...
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关键词
FinFETs,Degradation,Stress,Semiconductor process modeling,Electron traps,Hot carriers,Analytical models
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