Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing
IEEE Transactions on Electron Devices, pp. 2760-2764, 2020.
Al2O3-passivated Schottky-gate AlGaN/GaN high electron mobility transistors (HEMTs) with improved subthreshold swing (SS) and drain current ON/OFF ratio by postmetallization annealing (PMA) at 500 °C in N2 ambient are reported. With the PMA, the gate leakage current in the reverse biased region and the OFF-state drain current are reduced ...More
Full Text (Upload PDF)
PPT (Upload PPT)