Improving Current ON/OFF Ratio and Subthreshold Swing of Schottky- Gate AlGaN/GaN HEMTs by Postmetallization Annealing

Hsuan-Ping Lee
Hsuan-Ping Lee

IEEE Transactions on Electron Devices, pp. 2760-2764, 2020.

Cited by: 0|Bibtex|Views1|DOI:https://doi.org/10.1109/TED.2020.2992014
EI WOS
Other Links: academic.microsoft.com

Abstract:

Al2O3-passivated Schottky-gate AlGaN/GaN high electron mobility transistors (HEMTs) with improved subthreshold swing (SS) and drain current ON/OFF ratio by postmetallization annealing (PMA) at 500 °C in N2 ambient are reported. With the PMA, the gate leakage current in the reverse biased region and the OFF-state drain current are reduced ...More

Code:

Data:

Your rating :
0

 

Tags
Comments