Analysis of SiO 2 Films on Si Substrate by GD-OES Depth Profiling and GIXR Measurements

The international standardization on analysis of oxide films formed on the solid surfaces by glow discharge optical emission spectrometry (GD-OES) is now active from the background of demand of the quantification of oxide films on solids. In the quantification of GD-OES depth profiles, an effective density of oxide films is needed to estimate the quantitative depth profiles from the relationship between emission intensities of elements and sputtering time. In this work GD-OES depth profile of SiO2/Si films, which were formed on the surface of silicon by annealing in air, were quantitatively analyzed. Furthermore, the thickness of the oxide films estimated by GD-OES was compared with that by grazing incidence X-ray reflectivity (GIXR). The results showed that the results obtained by GD-OES were consistent with those GIXR.