Synthesis large scale bnns for graphene electronics

Boron nitride nanosheets (BNNS) and graphene have similar crystal structure and slight lattice mismatch; therefore potentially superb for graphene electronics. BNNS also provides relatively smooth surface, free from dangling bonds, as a result improve the physical properties of graphene in case of graphene placed on BNNS. However, it is challenging to produce large scale BNNS. In this presentation, we will demonstrate how we successfully synthesized large assembly of overlapping BNNS (50×50 μm) using low pressure tube furnace CVD technique. Graphene samples were prepared with hot filament CVD (HFCVD) technique. The electrical properties of graphene e.g. sheet resistance, charge transport properties and thermal conductivity are investigated by placing graphene on BNNS (G/BNNS). The physical properties of 2D stacked materials G/BNNS will be demonstrated on the basis of sheet resistance measurements, thermal conductivity, scanning electron microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopic investigations, respectively.