3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

Ming Xiao
Ming Xiao
Yunwei Ma
Yunwei Ma
Kai Cheng
Kai Cheng
Kai Liu
Kai Liu
Andy Xie
Andy Xie

IEEE Electron Device Letters, pp. 1177-1180, 2020.

Cited by: 0|Bibtex|Views5|DOI:https://doi.org/10.1109/LED.2020.3005934
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Abstract:

This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$115~\Omega $ </tex-math></inline-formula> /sq. A novel edge terminatio...More

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