3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

This work demonstrates five-channel AlGaN/ GaN Schottky barrier diodes (SBDs) fabricated on a 4-inch wafer with a sheet resistance of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$115~\Omega $ </tex-math></inline-formula> /sq. A novel edge terminatio...More