RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band

Neil Moser
Neil Moser
Nicholas C. Miller
Nicholas C. Miller
Kyle J. Liddy
Kyle J. Liddy
Miles Lindquist
Miles Lindquist
Michael Elliot
Michael Elliot
Ryan Gilbert
Ryan Gilbert
Elizabeth Werner
Elizabeth Werner
Antonio Crespo
Antonio Crespo

IEEE Electron Device Letters, pp. 1181-1184, 2020.

Cited by: 0|Bibtex|Views14|DOI:https://doi.org/10.1109/LED.2020.3006035
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Abstract:

We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two barrier alloys—a ternary of ScAlN and a quaternary of ScAlGaN. The active layers are grown by molecular beam epitaxy on a GaN-on-SiC template. The Sc(Al,Ga)N HEMTs with 120 n...More

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