RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
IEEE Electron Device Letters, pp. 1181-1184, 2020.
We report the RF power results of Sc(Al,Ga)N/GaN high electron mobility transistors (HEMTs). We show dc, small-signal RF and load-pull performance at 30 GHz with two barrier alloys—a ternary of ScAlN and a quaternary of ScAlGaN. The active layers are grown by molecular beam epitaxy on a GaN-on-SiC template. The Sc(Al,Ga)N HEMTs with 120 n...More
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