Raman Thermography of Peak Channel Temperature in $\beta$ -Ga 2 O 3 MOSFETs

β-Ga2O3 is an attractive material for highvoltage applications and has the potential for monolithically integrated RF devices. A combination of Raman nanoparticle thermometry measurement and thermal simulation has been used to measure the peak channel temperature due to self-heating in β-Ga2O3 MOSFETs. The peak channel thermal resistance measured at the gate surface in the device center was 88 mm ...