Study of the Walk-Out Effect of Junction Breakdown Instability of the High-Voltage Depletion-Mode N-Channel MOSFET for NAND Flash Peripheral Device and an Efficient Layout Solution

Chieh Roger Lo
Chieh Roger Lo
Keh-Chung Wang
Keh-Chung Wang
Yung-Hsiang Chen
Yung-Hsiang Chen
Chu-Yung Liu
Chu-Yung Liu

IRPS, pp. 1-6, 2020.

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