Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film

Semiconducting diamond has the potential for an order-of-magnitude increase in power handling over currently used semiconductors. This is made possible by diamond's higher thermal conductivity and a higher breakdown voltage than any other device-quality semiconductor. Diamond power devices have numerous potential applications in the power grid and in high-power high-frequency RF applications.