Process flow development and integration of porous low k for 45 nm node

Christopher Ordonio
Christopher Ordonio
Phong Nguyen
Phong Nguyen
Hongbin Fang
Hongbin Fang
Andrew Li
Andrew Li
Hsien-Lung Yang
Hsien-Lung Yang
Jick Yu
Jick Yu
Alex Demos
Alex Demos
Mani Thothadri
Mani Thothadri

ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), pp. 371-377, 2008.

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Abstract:

Porous low k materials are essential to meet the dielectric constant requirements for 45 and 32nm node technologies. Porous low k materials present unique integration challenges and need optimization and/or development of new processes. This paper reports on the process flow development and integration of a k similar to 2.5 PECVD porous l...More

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