Process flow development and integration of porous low k for 45 nm node
ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007), pp. 371-377, 2008.
Abstract:
Porous low k materials are essential to meet the dielectric constant requirements for 45 and 32nm node technologies. Porous low k materials present unique integration challenges and need optimization and/or development of new processes. This paper reports on the process flow development and integration of a k similar to 2.5 PECVD porous l...More
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