Study of Plasma Arcing Mechanism in High Aspect Ratio Slit Trench Etching
2019 30TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2019.
The abnormal process issue, arcing, was met in recipe development of high aspect ratio (HAR) trench etching. The arcing mechanism is proposed by continuous growth of polymer upon hard-mask along pattern boundary during deep trench etching. It leads to excess charge trapped and high potential difference between polymer and substrate. Event...More
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