Study of Plasma Arcing Mechanism in High Aspect Ratio Slit Trench Etching
2019 30TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2019.
Abstract:
The abnormal process issue, arcing, was met in recipe development of high aspect ratio (HAR) trench etching. The arcing mechanism is proposed by continuous growth of polymer upon hard-mask along pattern boundary during deep trench etching. It leads to excess charge trapped and high potential difference between polymer and substrate. Event...More
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