The influence of low-energy and low-dose electron-beam irradiation on characteristics and reliability of InGaN/GaN LED

The effect of low-energy and low-dose electron-beam irradiation on characteristics and reliability of GaN/InGaN LED was studied quantitatively by I-V, luminescence characteristic and electrostatic test. The results showed that the forward voltage was reduced by 1.22% and the luminescence was increased by 8.66% with the electron-beam irradiation. The anti-static properties were reduced in the mechanical electrostatic test and unchanged in the human body electrostatic test. With further study on the effect of electron beam irradiation, we do the current aging test to the LEDs. These results can be used for the determination of the electron-beam irradiation energy and dose.