Proton conducting C3N4/Chitosan composite electrolytes based InZnO thin film transistor for artificial synapse

Environmentally-friendly and degradable organic materials is a hot spot in the research of electronic devices. In the study of synaptic transistors, chitosan has received widespread attention due to its good electric double layer characteristics and biocompatibility. However, in previous researches on chitosan synaptic transistors, due to the low ion migration of chitosan, it is difficult to obtain high-performance synaptic transistors. In this work, graphene-like two-dimensional functional material C3N4 is first doped in chitosan to study the performance improvement of a single synaptic transistor. This work simulated Excitatory post-synaptic current (EPSC), double pulse facilitation (PPF), dynamic time filter, and nonlinear summation successfully. The effects of photocurrents generated by photons on the performance of synaptic transistors under different lighting conditions were also tested. This work is an interesting attempt to improve the performance of synaptic electronics.