SiGeBiCMOS and CMOS transceiver blocks for automotive radar and imaging applications in the 80-160 GHz range

This paper examines the suitability of advanced SiGe BiCMOS and sub 65nm CMOS technologies for applications beyond 80GHz. System architectures are discussed along with the detailed comparison of VCOs, LNAs, PAs and static frequency dividers fabricated in CMOS and SiGe BiCMOS, as required for automotive cruise-control radar, high data-rate radio, and active and passive imaging in the 80GHz to 160GHz range. It is demonstrated experimentally that prototype SiGe HBT and BiCMOS technologies have adequate performance for all critical 80GHz building blocks, even at temperatures as high as 125 C. Although showing promise, existing 90nm GP CMOS and 65nm LP CMOS circuits at these frequencies remain significantly inferior to their SiGe counterparts.