Halide vapor phase epitaxy of p-type Mg-doped GaN utilizing MgO

Halide vapor phase epitaxy of p-type GaN:Mg films was realized by using solid MgO as the Mg source. The Mg concentration was controlled by supplying HCl gas in a MgO source zone. Mg-related photoluminescence peaks were observed at around 3.3 and 2.9 eV. For a sample with a Mg concentration of 2.8 x 10(19) cm(-3), the Hall-effect measurement showed p-type conduction with a hole concentration and a hole mobility of 1.3 x 10(17) cm(-3) and 9.1 cm(2) V-1 s(-1), respectively, at room temperature. The Mg acceptor level was 232 15 meV, which is in good agreement with the previous report.