Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO
Journal of Applied Physics, pp. 2157042020.
Wurtzite ZnO and related MgxZn1−xO alloys are attractive semiconductors for the use in radiation-resistant and/or visible-light-transparent transistors and ultraviolet light-emitters. As free-carrier lifetime controls the device performances, the accurate understanding of the carrier capture-coefficients of dominant nonradiative recombina...More
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