Hole capture-coefficient of intrinsic nonradiative recombination centers that commonly exist in bulk, epitaxial, and proton-irradiated ZnO

Journal of Applied Physics, pp. 2157042020.

Cited by: 0|Bibtex|Views1|DOI:https://doi.org/10.1063/5.0011309
Other Links: academic.microsoft.com

Abstract:

Wurtzite ZnO and related MgxZn1−xO alloys are attractive semiconductors for the use in radiation-resistant and/or visible-light-transparent transistors and ultraviolet light-emitters. As free-carrier lifetime controls the device performances, the accurate understanding of the carrier capture-coefficients of dominant nonradiative recombina...More

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