Low leakage Mg-compensated GaN Schottky diodes on free-standing GaN substrate for high energy $\alpha$ -particle detection
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)(2020)
摘要
Low leakage current Schottky barrier diodes (SBDs) were fabricated on
$\mathbf{30}\ \mu\mathbf{m}$
thick Mg-compensated GaN drift layer (DL) grown on a free-standing GaN substrate and tested up to 5.48 MeV
$\alpha$
-particle energy. The Mg-compensated
$\mathbf{30}\ \mu\mathbf{m}$
thick n--GaN DL was grown by MOCVD with low charge carrier density (CCD) of
$\mathbf{4.1}\times \mathbf{10}^{\mathbf{15}}/\mathbf{cm}^{\mathbf{3}}$
. The observation of low CCD in the GaN DL by Mg-compensation helps to reduce the reverse leakage current (I
R
) of SBDs to 2 pA and in the formation of
$\mathbf{30}\mu\mathbf{m}$
depletion width (DW) even at 0 V. The fabricated GaN SBDs detected
$\alpha$
-particle up to energy of 5.48 MeV with high charge collection efficiencies (CCE) of 100% emitted from
241
Am source.
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关键词
high energy α-particle detection,low leakage current Schottky barrier diodes,α-particle energy,charge carrier density,reverse leakage current,depletion width,SBD,CCD,charge collection efficiencies,CCE,MOCVD,size 30.0 mum,electron volt energy 5.48 MeV,current 2.0 pA,voltage 0.0 V,GaN,Mg
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